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공공누리This item is licensed Korea Open Government License

Title
Electronic Structure of the InP(111)A-(sqrt(3)x(sqrt(3)) Semiconductor Surface
Author(s)
이홍석
Publication Year
2014-11-28
Abstract
We present a first-principles theoretical study of the relative formation energies and the electronic states of the InP(111)A surface. The energetically most favorable reconstruction has a T4-site P trimer on the surface, which exhibits a metallic band character and does not obey the electron counting rule (ECR). The stability of this structure is attributed to the balance between the ECR and the minimization of local distortion in the surface region. Our results for the simulated scanning tunneling microscopy images confirm the experimental interpretation of bright protrusions on the P trimers.
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884
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Appears in Collections:
7. KISTI 연구성과 > 학술지 발표논문
URI
https://repository.kisti.re.kr/handle/10580/14303
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