download0 view714
twitter facebook

공공누리This item is licensed Korea Open Government License

dc.contributor.author
이홍석
dc.date.accessioned
2019-08-28T07:41:32Z
dc.date.available
2019-08-28T07:41:32Z
dc.date.issued
2014-11-28
dc.identifier.issn
0374-4884
dc.identifier.uri
https://repository.kisti.re.kr/handle/10580/14303
dc.description.abstract
We present a first-principles theoretical study of the relative formation energies and the electronic states of the InP(111)A surface. The energetically most favorable reconstruction has a T4-site P trimer on the surface, which exhibits a metallic band character and does not obey the electron counting rule (ECR). The stability of this structure is attributed to the balance between the ECR and the minimization of local distortion in the surface region. Our results for the simulated scanning tunneling microscopy images confirm the experimental interpretation of bright protrusions on the P trimers.
dc.language
kor
dc.relation.ispartofseries
Journal of the Korean Physical Society
dc.title
Electronic Structure of the InP(111)A-(sqrt(3)x(sqrt(3)) Semiconductor Surface
Appears in Collections:
7. KISTI 연구성과 > 학술지 발표논문
Files in This Item:
There are no files associated with this item.

Browse