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공공누리This item is licensed Korea Open Government License

Title
A single-atom transistor
Author(s)
MartinFuechsle류훈
Publication Year
2012-02-19
Abstract
Theabilitytocontrolmatterattheatomicscaleandbuilddeviceswithatomicprecisioniscentraltonanotechnology.Thescanningtunnellingmicroscopecanmanipulateindividualatomsandmoleculesonsurfaces,butthemanipulationofsilicontomakeatomic-scalelogiccircuitshasbeenhamperedbythecovalentnatureofitsbonds.Resist-basedstrategieshaveallowedtheformationofatomic-scalestructuresonsiliconsurfaces,butthefabricationofworkingdevices-suchastransistorswithextremelyshortgatelengths,spin-basedquantumcomputersandsolitarydopantoptoelectronicdevices-requirestheabilitytopositionindividualatomsinasiliconcrystalwithatomicprecision.Here,weuseacombinationofscanningtunnellingmicroscopyandhydrogen-resistlithographytodemonstrateasingle-atomtransistorinwhichanindividualphosphorusdopantatomhasbeendeterministicallyplacedwithinanepitaxialsilicondevicearchitecturewithaspatialaccuracyofonelatticesite.Thetransistoroperatesatliquidheliumtemperatures,andmillikelvinelectrontransportmeasurementsconfirmthepresenceofdiscretequantumlevelsintheenergyspectrumofthephosphorusatom.Wefindachargingenergythatisclosetothebulkvalue,previouslyonlyobservedbyopticalspectroscopy.
Keyword
Quantum-computer; STMFabrication; Tight-bindingModel; Nanoelectronics
Journal Title
NatureNanotechnology
Citation Volume
7
ISSN
1748-3387
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Appears in Collections:
7. KISTI 연구성과 > 학술지 발표논문
URI
https://repository.kisti.re.kr/handle/10580/14084
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