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- dc.contributor.author
- MartinFuechsle
- dc.contributor.author
- 류훈
- dc.date.accessioned
- 2019-08-28T07:41:13Z
- dc.date.available
- 2019-08-28T07:41:13Z
- dc.date.issued
- 2012-02-19
- dc.identifier.issn
- 1748-3387
- dc.identifier.uri
- https://repository.kisti.re.kr/handle/10580/14084
- dc.description.abstract
- Theabilitytocontrolmatterattheatomicscaleandbuilddeviceswithatomicprecisioniscentraltonanotechnology.Thescanningtunnellingmicroscopecanmanipulateindividualatomsandmoleculesonsurfaces,butthemanipulationofsilicontomakeatomic-scalelogiccircuitshasbeenhamperedbythecovalentnatureofitsbonds.Resist-basedstrategieshaveallowedtheformationofatomic-scalestructuresonsiliconsurfaces,butthefabricationofworkingdevices-suchastransistorswithextremelyshortgatelengths,spin-basedquantumcomputersandsolitarydopantoptoelectronicdevices-requirestheabilitytopositionindividualatomsinasiliconcrystalwithatomicprecision.Here,weuseacombinationofscanningtunnellingmicroscopyandhydrogen-resistlithographytodemonstrateasingle-atomtransistorinwhichanindividualphosphorusdopantatomhasbeendeterministicallyplacedwithinanepitaxialsilicondevicearchitecturewithaspatialaccuracyofonelatticesite.Thetransistoroperatesatliquidheliumtemperatures,andmillikelvinelectrontransportmeasurementsconfirmthepresenceofdiscretequantumlevelsintheenergyspectrumofthephosphorusatom.Wefindachargingenergythatisclosetothebulkvalue,previouslyonlyobservedbyopticalspectroscopy.
- dc.language
- eng
- dc.relation.ispartofseries
- NatureNanotechnology
- dc.title
- A single-atom transistor
- dc.citation.endPage
- 246
- dc.citation.startPage
- 242
- dc.citation.volume
- 7
- dc.subject.keyword
- Quantum-computer
- dc.subject.keyword
- STMFabrication
- dc.subject.keyword
- Tight-bindingModel
- dc.subject.keyword
- Nanoelectronics
- Appears in Collections:
- 7. KISTI 연구성과 > 학술지 발표논문
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