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공공누리This item is licensed Korea Open Government License

Title
Piezoresistivity of InAsP Nanowires: the Role of Crystal Phases and Phosphorus Atoms in Strain-induced Channel Conductances
Author(s)
김인류훈김한슬
Publisher
MDPI
Publication Year
2019-09-06
Abstract
Strong piezoresistivity of InAsP nanowires is rationalized with atomistic simulations coupled to Density Functional Theory. With a focal interest in the case of the As(75%)-P(25%) alloy, the role of crystal phases and phosphorus atoms in strain-driven carrier conductance is discussed with a direct comparison to nanowires of a single crystal phase and a binary (InAs) alloy. Our analysis of electronic structures presents solid evidences that the strong electron conductance and its sensitivity to external tensile stress are due to the phosphorous atoms in a Wurtzite phase, and the effect of a Zincblende phase is not remarkable. With several solid connections to recent experimental studies, this work can serve as a sound framework for understanding of the unique piezoresistive characteristics of InAsP nanowires.
Keyword
압저항; InAsP 나노선; 전자구조 전산모사; 범밀도함수이론; Piezoresistivity; InAsP nanowires; Electronic Structures Simulations; Density Functional Theory
Journal Title
Molecules;
Citation Volume
24
ISSN
1420-3049
DOI
10.3390/molecules24183249
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Appears in Collections:
7. KISTI 연구성과 > 학술지 발표논문
URI
https://repository.kisti.re.kr/handle/10580/16230
Fulltext
 https://scienceon.kisti.re.kr/srch/selectPORSrchArticle.do?cn=NART98200332
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