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공공누리This item is licensed Korea Open Government License

Title
Limits to Metallic Conduction in Atomic-Scale Quasi-One-Dimensional Silicon Wires
Author(s)
BentWeber류훈
Publication Year
2014-12-10
Abstract
The recent observation of ultralow resistivity in highly doped, atomic-scale silicon wires has sparked interest in what limits conduction in these quasi-1D systems. Here we present electron transport measurements of gated Si∶P wires of widths 4.6 and 1.5 nm. At 4.6 nm we find an electron mobility, μel ≃ 60 cm2/Vs, in excellent agreement with that of macroscopic Hall bars. Metallic conduction persists to millikelvin temperatures where we observe Gaussian conductance fluctuations of order δG ∼ e2/h. In thinner wires (1.5 nm), metallic conduction breaks down at G ≲ e2/h, where localization of carriers leads to Coulomb blockade. Metallic behavior is explained by the large carrier densities in Si∶P δ-doped systems,allowing the occupation of all six valleys of the silicon conduction band, enhancing the number of 1D channels and hence the localization length.
Journal Title
PHYSICAL REVIEW LETTERS
ISSN
0031-9007
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Appears in Collections:
7. KISTI 연구성과 > 학술지 발표논문
URI
https://repository.kisti.re.kr/handle/10580/14292
http://www.ndsl.kr/ndsl/search/detail/article/articleSearchResultDetail.do?cn=NART83971746
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