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공공누리This item is licensed Korea Open Government License

Title
Domain switching and creep behavior of a poled PZT wafer under through-thickness electric fields at high temperatures
Author(s)
김상주김주홍이창환
Publication Year
2010-10-01
Abstract
Various constant magnitudes of through-thickness electric field are applied to a poled PZT wafer for about 1800 s at four different high temperatures. The wafer is then removed swiftly from the field and kept at zero electric field for about 1000 s. During the whole period of nonzero and zero electric field loading time, the electric displacement in thickness direction and the in-plane strain of the wafer are measured over time. The measured responses at different electric fields and temperature
Keyword
PZT wafer; High temperature; Domain switching; Creep; Electric field
Journal Title
Acta materialia
Citation Volume
58
ISSN
1359-6454
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Appears in Collections:
7. KISTI 연구성과 > 학술지 발표논문
URI
https://repository.kisti.re.kr/handle/10580/13874
http://www.ndsl.kr/ndsl/search/detail/article/articleSearchResultDetail.do?cn=NART52565147
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