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공공누리This item is licensed Korea Open Government License

dc.contributor.author
오은순
dc.contributor.author
이재민
dc.date.accessioned
2019-08-28T07:41:11Z
dc.date.available
2019-08-28T07:41:11Z
dc.date.issued
2012-09-01
dc.identifier.issn
1567-1739
dc.identifier.uri
https://repository.kisti.re.kr/handle/10580/14062
dc.identifier.uri
http://www.ndsl.kr/ndsl/search/detail/article/articleSearchResultDetail.do?cn=NART63195511
dc.description.abstract
WefabricatedGaAs-basedspin-LED(lightemittingdiode)structuresusinghalf-metallicFe3O4asspininjectorsandmeasuredthecircularpolarizationoftheelectroluminescence(EL).ThecircularpolarizationoftheELduetothespininjectionwasimprovedbythelowtemperaturegrowthoftheferromagneticlayer,comparedtotheroomtemperaturegrowth.Wealsostudiedtheexcitationwavelengthdependenceofthephotoluminescence(PL)spectraandthevariationoftheELspectrawithincreasingcurrent.TheexcesscarrierdependenceoftheELpeakswasfoundtobedifferentfromthatofthePLpeaks,whichwasexplainedbythecarrierinjectionintothebufferlayer.
dc.language
eng
dc.relation.ispartofseries
CurrentAppliedPhysics
dc.title
Optical characterizations of GaAs-based spin light emitting diodes using Fe3O4 spin injectors
dc.citation.endPage
1247
dc.citation.number
5
dc.citation.startPage
1244
dc.citation.volume
12
dc.subject.keyword
Spinlightemittingdiodes
dc.subject.keyword
Halfmetal
dc.subject.keyword
Electroluminescence
dc.subject.keyword
Photoluminescence
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7. KISTI 연구성과 > 학술지 발표논문
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