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공공누리This item is licensed Korea Open Government License

dc.contributor.author
이홍석
dc.contributor.author
칵터
dc.date.accessioned
2019-08-28T07:40:48Z
dc.date.available
2019-08-28T07:40:48Z
dc.date.issued
2009-03-01
dc.identifier.issn
0892-7022
dc.identifier.uri
https://repository.kisti.re.kr/handle/10580/13813
dc.identifier.uri
http://www.ndsl.kr/ndsl/search/detail/article/articleSearchResultDetail.do?cn=NART48726377
dc.description.abstract
We have investigated the atomic structure of the Au/GaAs(111)B surface and have performed scanning tunnelling microscopy (STM) simulations of the surface by using first-principles calculations. The atomic geometry determined with Au adatoms located at every third threefold hollow hcp site of the Ga lattice, agrees well with results reported from STM and low-energy electron diffraction experiments. The simulated STM images support experimental observations of bright centers with triangular spots. The calculated value of the diffusion barrier height of the Au adatom quantitatively explains the experimentally observed reconstruction of the wetting layer of Au on the Au/GaAs(111)B surface.
dc.language
eng
dc.relation.ispartofseries
Molecular simulation
dc.title
Gold-induced surface reconstruction on GaAs(111)B surface
dc.citation.endPage
261
dc.citation.number
3
dc.citation.startPage
258
dc.citation.volume
35
dc.subject.keyword
electronic structure
dc.subject.keyword
simulation
dc.subject.keyword
nano semiconductor surface
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7. KISTI 연구성과 > 학술지 발표논문
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