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공공누리This item is licensed Korea Open Government License

dc.contributor.author
김상주
dc.contributor.author
이창환
dc.date.accessioned
2019-08-28T07:40:48Z
dc.date.available
2019-08-28T07:40:48Z
dc.date.issued
2009-04-07
dc.identifier.issn
0020-7683
dc.identifier.uri
https://repository.kisti.re.kr/handle/10580/13810
dc.description.abstract
A commercially available soft PZT wafer that is poled in thickness direction is subjected to
three different sets of loading environment, and variations of electric displacement in
thickness direction and longitudinal transverse strains are measured over time. Pure tensile
stress creep experiments are made in short and open circuit conditions. Different
material responses in the two electrical boundary conditions are explained by the effects
of piezoelectrically produced internal electric field on linear material moduli and domain
switching mechanisms.
dc.language
eng
dc.relation.ispartofseries
International journal of solids and structures
dc.title
Creep behavior of a poled PZT wafer under longitudinal tensile stress and through thickness electric field
dc.citation.endPage
725
dc.citation.number
4
dc.citation.startPage
716
dc.citation.volume
46
dc.subject.keyword
PZT wafer
dc.subject.keyword
Domain switching
dc.subject.keyword
creep
dc.subject.keyword
tensile stress
dc.subject.keyword
electric field
Appears in Collections:
7. KISTI 연구성과 > 학술지 발표논문
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